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| MITSUBISHI IGBT MODULES CM100DY-24NF HIGH POWER SWITCHING USE CM100DY-24NF IC ................................................................... 100A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point (Base plate) 94 17 23 23 17 C2E1 E2 C1 E2 G2 4 G1 E1 12 2-6.5 MOUNTING HOLES 12 800.25 12 4 3-M5 NUTS 20 (14) 48 13 18 4 TAB #110. t=0.5 16 7 16 7 16 7.5 C2E1 E2 C1 +0.1 29 -0.5 LABEL CIRCUIT DIAGRAM G1 E1 21.2 E2 G2 Mar.2003 MITSUBISHI IGBT MODULES CM100DY-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC' = 113C*3 Pulse Pulse TC = 25C Conditions Ratings 1200 20 100 200 100 200 650 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W C C V N*m N*m g (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 100A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 100A, VGE = 15V VCC = 600V, IC = 100A VGE1 = VGE2 = 15V RG = 3.1, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) Tc measured point is just under the chips Min. -- 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 3.1 Limits Typ. -- 7 -- 1.8 2.0 -- -- -- 675 -- -- -- -- -- 5.0 -- -- -- 0.07 -- -- Max. 1 8 0.5 2.5 -- 23 2 0.45 -- 120 80 450 350 150 -- 3.2 0.19 0.35 -- 0.13*3 31 Unit mA V A V nF nF nF nC ns ns ns ns ns C V C/W C/W C/W C/W *1 : Tc measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : Tc' measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. Mar.2003 MITSUBISHI IGBT MODULES CM100DY-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 200 VGE = 20V 12 4 15 13 Tj = 25C VGE = 15V 160 3 120 11 2 80 10 40 9 0 0 2 4 6 8 10 1 Tj = 25C Tj = 125C 0 0 50 100 150 200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 10 Tj = 25C EMITTER CURRENT IE (A) 8 5 3 2 6 102 7 5 3 2 4 IC = 100A IC = 200A IC = 40A 2 Tj = 25C Tj = 125C 0 1 2 3 4 5 0 6 8 10 12 14 16 18 20 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 Cies SWITCHING TIME (ns) tf td(off) 101 7 5 3 2 102 7 5 3 2 td(on) tr Conditions: VCC = 600V VGE = 15V RG = 3.1 Tj = 125C Inductive load 2 3 5 7 102 2 3 5 7 103 100 7 5 3 2 Coes 101 7 5 3 2 Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Mar.2003 MITSUBISHI IGBT MODULES CM100DY-24NF HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 Single Pulse TC = 25C 10-1 7 5 3 2 10-1 7 5 3 2 Irr 102 7 5 3 2 trr Conditions: VCC = 600V VGE = 15V RG = 3.1 Tj = 25C Inductive load 23 5 7 103 101 1 10 2 3 5 7 102 IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.19C/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.35C/W -3 10 10-2 7 5 3 2 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 EMITTER CURRENT IE (A) TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 100A 16 VCC = 400V VCC = 600V 12 8 4 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Mar.2003 |
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